Temperature dependence of the electrical characteristics up to 370 K of amorphous In-Ga-ZnO thin film transistors
详细信息 查看全文
- 作者：M. Estradaa ; ; M. Rivasb ; I. Garduñ ; oa ; F. Avila-Herreraa ; A. Cerdeiraa ; M. Pavanelloc ; I. Mejiab ; M.A. Quevedo-Lopezb
- 关键词：IGZO TFTs ; Temperature dependence
- 刊名：Microelectronics Reliability
- 出版年：2016
- 出版时间：January 2016
- 年：2016
- 卷：56
- 期：Complete
- 页码：29-33
- 全文大小：1036 K
文摘
- •
We study Indium–Gallium–Zinc Oxide transistors with temperature.
- •
An Arrhenius-type dependence is seen in the temperature range from 300 K up to 370 K.
- •
The predominant transport mechanism observed is the Variable Range Hopping.
- •
Modeled characteristics at different temperatures matches well the experimental ones.