Whole article corrigendum: “Surface-plasmon-enhanced GaN-LED based on the multilayered rectangular nano-grating” [Optics Communications 322 (2014) 66-72]

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• 作者：Jun Zhu^a ; Haosu Zhang^a ; ^{zhanghs08@mails.tsinghua.edu.cn" class="auth_mail" title="E-mail the corresponding author} ; Zhendong Zhu^a ; ^b ; Qunqing Li^b ; Guofan Jin^a
• 关键词：GaN light-emitting diodes ; Photoluminescence ; Diffraction gratings ; Surface plasmons ; Emission efficiency ; Enhancement of internal quantum efficiency
• 刊名：Optics Communications
• 出版年：2017
• 出版时间：15 February 2017
• 年：2017
• 卷：385
• 期：Complete
• 页码：238-245
• 全文大小：1643 K

文摘

This article proposes a surface-plasmon-enhanced GaN-LED based on the multilayered rectangular nano-grating. This structure contains a SiO₂ film, an Ag film and a HfO₂ film sequentially coated on the rectangularly-patterned p-GaN layer. The Ag film is used to enhance the internal quantum efficiency. The HfO₂ cover-layer symmetrizes the distribution of refractive index besides the Ag film to improve the light extraction efficiency and surface-plasmon (SP) extraction efficiency. The inserted SiO₂ layer is utilized to further improve the SP extraction efficiency. The properties of SP modes and Purcell effect in this structure are investigated. The photoluminescence experiments demonstrate that its peak intensity of top-emission is about 2.5 times greater than that from the reference structure covered by a single-layer Ag film on the rectangularly-patterned p-GaN layer.