Analysis of the dynamics of reactions of SiCl2 at Si(100) surfaces
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- 作者：Keisuke Anzai1 ; Ní ; lson Kunioshi ; nilson@waseda.jp" class="auth_mail" title="E-mail the corresponding author ; Akio Fuwa
- 关键词：Silicon surface growth ; Cluster model ; Reaction dynamics ; Molecular orbital method
- 刊名：Applied Surface Science
- 出版年：2017
- 出版时间：15 January 2017
- 年：2017
- 卷：392
- 期：Complete
- 页码：410-417
- 全文大小：1605 K
文摘
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Potential energy surfaces for SiCl2 adsorption on Si(100) surfaces are analyzed.
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SiCl2 is adsorbed without significant energy barriers.
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Intradimer and interdimer adsorption of SiCl2 follow similar dynamics.
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Adsorption of multiple SiCl2 on adjacent sites proceed similarly to the first adsorption.
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Activation energies of SiCl2 diffusion over the surface and desorption are similar.