The action of silicon doping in the first two to five barriers of eight periods In_0.2Ga_0.8N/GaN multiple quantum wells of blue LEDs

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• 作者：Meng-Chu Chen^a ; Yung-Chen Cheng^b ; ^{chengyc@mail.nutn.edu.tw" class="auth_mail" title="E-mail the corresponding author} ; Chun-Yuan Huang^a ; Hsiang-Chen Wang^c ; Kuang-I Lin^d ; Zu-Po Yang^e
• 关键词：InGaN/GaN quantum wells (QWs) ; Silicon (Si) doping ; Soft confinement potential ; Quantum-confined Stark effect (QCSE) ; Auger processes ; External quantum efficiency (EQE)
• 刊名：Journal of Luminescence
• 出版年：2016
• 出版时间：September 2016
• 年：2016
• 卷：177
• 期：Complete
• 页码：59-64
• 全文大小：954 K

文摘

First two to five barriers in the growth sequence having silicon (Si) doping of eight periods In_0.2Ga_0.8N/GaN quantum wells (QWs) on twenty pairs of In_0.02Ga_0.98N/GaN superlattice strain relief layers (SRLs) of blue LEDs were prepared by low pressure metal–organic chemical vapor deposition (LPMOCVD) system on patterned sapphire substrates (PSSs). The effect of doping layers on the luminescence properties of QWs of blue LEDs was investigated. For the sample with first four barriers having Si doping, formation of soft confinement of QWs potential and strong carrier localization inside QWs were occurred. There is better spread of carriers among eight QWs and strong radiative recombination of carriers inside QWs. The increase of output power and external quantum efficiency (EQE) is due to decrease of Auger processes, leakage of carriers out of QWs, and nonradiative recombination centers. The consequences demonstrate that first four barriers with Si doping possess the favorable doping condition for eight periods In_0.2Ga_0.8N/GaN QWs.