Rehybridization-induced defect-level of open-core edge dislocation in GaN

详细信息    查看全文

• 作者：Mino Yang ; Jongseob Kim ; Jaewoo Lee ; Cheol-Woong Yang
• 关键词：Nitride ; Defects in semiconductors ; Dislocation ; Optical properties ; Density functional theory
• 刊名：Scripta Materialia
• 出版年：2013
• 出版时间：October, 2013
• 年：2013
• 卷：69
• 期：7
• 页码：537-540
• 全文大小：792 K

文摘

We present a defect-level induced by a new rehybridization of broken-bonded GaN in open-core threading edge dislocations (TED) of heteroepitaxial GaN. The rehybridization was discovered toward sp2-/sp3- from the sp2-/p3- of full-core TED by density functional theory calculation. The filled non-bonding state of the nitrogen¡¯s sp3- bond is located in the middle of the band gap, which corresponds to the source of yellow luminescence.