Effect of organic solar cells using various power O2 plasma treatments on the indium tin oxide substrate
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- 作者：Jhong-Ciao Kea ; Yeong-Her Wanga ; Kan-Lin Chenb ; Chien-Jung Huangc ; chien@nuk.edu.tw" class="auth_mail" title="E-mail the corresponding author
- 关键词：Organic solar cell ; Indium tin oxide ; O2 plasma
- 刊名：Journal of Colloid and Interface Science
- 出版年：2016
- 出版时间：1 March 2016
- 年：2016
- 卷：465
- 期：Complete
- 页码：311-315
- 全文大小：1642 K
文摘
The effect of organic solar cells (OSCs) by using different power O2 plasma treatments on indium tin oxide (ITO) substrate was studied. The power of O2 plasma treatment on ITO substrate was varied from 20 W to 80 W, and the power conversion efficiency of device was improved from 1.18% to 1.93% at 20 W O2 plasma treatment. The function of O2 plasma treatment on ITO substrate was to remove the surface impurity and to improve the work function of ITO, which can reduce the energy offset between the ITO and SubPc layer and depress the leakage current of device, leading to the shunt resistance increased from 897 to 1100 Ω cm2. The surface roughness of ITO decreased from 3.81 to 3.33 nm and the work function of ITO increased from 4.75 to 5.2 eV after 20 W O2 plasma treatment on ITO substrate. As a result, the open circuit voltage and the fill factor were improved from 0.46 to 0.70 V and from 0.56 to 0.61, respectively. However, the series resistance of device was dramatically increased as the power of O2 plasma treatment exceeds 40 W, leading to the efficiency reduction. The result is attributed to the variation of oxygen vacancies in ITO film after the 60, 80 W O2 plasma treatment. As a consequence, the power of O2 plasma treatment on ITO substrate for the OSCs application should be controlled below 40 W to avoid affecting the electricity of ITO film.