Quantitative effect of minority carrier diffusion length on the electrical property of cast monocrystalline silicon solar cell

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• 作者：Ke Yu ; ^{firelifespy@aliyun.com" class="auth_mail" title="E-mail the corresponding author} ; Panjian Li ; Lijian Wang
• 关键词：Minority carrier diffusion length ; Cast monocrystalline Si ; Conversion efficiency ; Solar cell
• 刊名：Optik - International Journal for Light and Electron Optics
• 出版年：2016
• 出版时间：January 2016
• 年：2016
• 卷：127
• 期：1
• 页码：81-83
• 全文大小：1427 K

文摘

The paper reports on the quantitative study of the relationship between minority carrier diffusion length (L_D) and electrical property of cast monocrystalline silicon (Si) solar cell. The cast monocrystalline Si cells were fabricated using a conventional Al back surface field (BSF) cell structure. L_D, internal quantum efficiency and morphology of cells were characterize utilizing WT-2000PVN, QEX7 and SEM. The fitted expression of conversion efficiency as a natural logarithmic function of L_D was extracted. The open circuit voltage (V_oc) and short circuit current (I_sc) can be both given as natural logarithmic functions of L_D, while the series resistance and shunt resistance are almost independent of L_D. The material quality of cast monocrystalline Si mainly impacts on I_sc and V_oc.