A simple method to synthesize continuous large area nitrogen-doped graphene

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• 作者：Hui Gao ; Li Song ; Wenhua Guo ; Liang Huang ; Dezheng Yang ; Fangcong Wang ; Yalu Zuo ; Xiaolong Fan ; Zheng Liu ; Wei Gao ; Robert Vajtai ; Ken Hackenberg ; Pulickel M. Ajayan
• 刊名：Carbon
• 出版年：2012
• 出版时间：October, 2012
• 年：2012
• 卷：50
• 期：12
• 页码：4476-4482
• 全文大小：990 K

文摘

Large area nitrogen (N)-doped graphene films were grown on copper foil by chemical vapor deposition. The as-grown films consisted of a single atomic layer that was continuous across the copper surface steps and grain boundaries, and could be easily transferred to a variety of substrates. N-doping was confirmed by X-ray photoelectron spectroscopy, Raman spectroscopy, and elemental mapping. N atoms were suggested to mainly form a ¡°pyrrolic¡± nitrogen structure, and the doping level of N reached up to 3.4 at. % . The N-doped graphene exhibited an n-type behavior, and nitrogen doping would open a band gap in the graphene. This study presents use of a new liquid precursor to obtain large area, continuous and mostly single atom layer N-doped graphene films.