Hexagonal-boron nitride substrates for electroburnt graphene nanojunctions
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- 作者：Hatef Sadeghi h.sadeghi@lancaster.ac.uk" class="auth_mail" title="E-mail the corresponding author ; Sara Sangtarash ; Colin Lambert ; c.lambert@lancaster.ac.uk" class="auth_mail" title="E-mail the corresponding author
- 关键词：Molecular electronics ; Electroburning ; Graphene ; Boron nitride ; Quantum interference
- 刊名：Physica E: Low-dimensional Systems and Nanostructures
- 出版年：2016
- 出版时间：August 2016
- 年：2016
- 卷：82
- 期：Complete
- 页码：12-15
- 全文大小：1981 K
文摘
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Geometrical structures at the last stages of nanogap formation are obtained.
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The electrical conductance of such structures is predicted to be only marginally affected by the presence of hBN.
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The junctions exhibit a counterintuitive increase in electrical conductance just before the gap forms.
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