Growth of V-Al-C thin films by direct current and high power impulse magnetron sputtering from a powder metallurgical composite target

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• 作者：Yan Jiang ; Stanislav Mrá ; z ; ^{mraz@mch.rwth-aachen.de} ; Jochen M. Schneider
• 关键词：V2AlC ; Sputtering ; Growth ; HIPIMS
• 刊名：Thin Solid Films
• 出版年：2013
• 出版时间：1 July, 2013
• 年：2013
• 卷：538
• 期：Complete
• 页码：1-6
• 全文大小：1022 K

文摘

V-Al-C thin films were deposited from a compound powder metallurgical composite target by direct current (DC) magnetron sputtering and High Power Impulse Magnetron Sputtering (HIPIMS) at 500 ¡ãC with a time averaged power of 250 W. The effect of pressure, distance, substrate bias potential as well as duty cycle of HIPIMS on the film composition and structure evolution was investigated. The formation of nano-crystalline V₂AlC MAX phase is observed in a (V,Al)₂C_x matrix at 500 ¡ãC during HIPIMS at 3-10 % duty cycle. An ion energy flux of > 5.7 times of the conventional DC magnetron sputtering flux was identified to be prerequisite for V₂AlC MAX phase formation.