Full wafer Si solar cells were tested for Schottky-type edge passivation.

The cell edges surrounding wafer were coated by an Ag nanoink and processed.

The regions of laser edge-cut and edge pn junction were covered by the annealed Ag metal.

The short circuit current was a little reduced but the fill factor was enhanced by the Schottky-type edge passivation.

The conversion efficiency is found to increase compared to reference cells.