A novel self-aligned charge plasma Schottky barrier tunnel FET using work function engineering

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• 作者：Sangeeta Singh^a ; ^{sangeeta.singh@iiitdmj.ac.in} ; Arun Pratap Singh^b ; P.N. Kondekar^a
• 关键词：Schottky barrier tunnel FET (SB-TFET) ; Charge plasma ; Work-function engineering ; Sub-threshold slope (SS) ; Drain induced barrier lowering (DIBL) ; Random dopant fluctuations (RDFs)
• 刊名：Microelectronic Engineering
• 出版年：2017
• 出版时间：25 January 2017
• 年：2017
• 卷：168
• 期：Complete
• 页码：67-75
• 全文大小：3332 K
• 卷排序：168

文摘

Investigated a self-aligned double pocket CP-SB-TFET. It employs induced charge plasma instead of the actual doping. It synergistically leverages Schottky barrier tunneling and induced electron plasma. It offers high immunity towards process variations, doping control issues, mobility degradation and RDFs,