Strain compensation techniques for red AlGaInP-VECSELs: Performance comparison of epitaxial designs

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• 作者：Thomas Schwarzbä ; ck ; ^{t.schwarzbaeck@ihfg.uni-stuttgart.de} ; Hermann Kahle ; Michael Jetter ; Peter Michler
• 关键词：A3. Metalorganic vapor phase epitaxy ; A3. Laser epitaxy ; B2. Semiconducting III&ndash ; IV materials ; B2. AlGaInP ; B3. VECSEL
• 刊名：Journal of Crystal Growth
• 出版年：2013
• 出版时间：1 May, 2013
• 年：2013
• 卷：370
• 期：Complete
• 页码：208-211
• 全文大小：516 K

文摘

We present a strain-compensation design for non-resonantly pumped vertical external cavity surface-emitting lasers for emission in the red spectral range around 665 nm. Here, the VECSEL chip is based on a metal-organic vapor-phase epitaxy grown (Ga_xIn_1?x)_0.5P_0.5/[(Al_xGa_1?x)_yIn _1?y]_0.5P_0.5 multi-quantum-well structure with 20 compressively strained quantum wells. By introducing tensile strained quaternary barriers and cladding layers in a 5¡Á4 QW design, we could compensate for the compressive strain introduced by the quantum wells. Photoluminenscence measurements of structures with different numbers of quantum well packages reveal a more homogenous quantum well growth due to the strain-compensation technique. Furthermore, with the strain compensation technique, the output power could be increased over 30 % compared to our conventional structures.