Growth and luminescent properties of scintillators based on the single crystalline films of (Lu,Gd)3(Al,Ga)5O12:Ce garnets
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- 作者：Yu. Zorenkoa ; b ; zorenko@ukw.edu.pl" class="auth_mail" title="E-mail the corresponding author ; V. Gorbenkoa ; b ; Ja. Vasylkivb ; T. Strzyżewskia ; A. Fedorovc ; R. Kucerkovad ; J.A. Maresd ; M. Nikld ; P. Bilskie ; A. Twardake
- 关键词：Multicomponent garnets ; Ce dopant ; Liquid phase epitaxy ; Single crystalline films ; Scintillators
- 刊名：Journal of Luminescence
- 出版年：2016
- 出版时间：January 2016
- 年：2016
- 卷：169
- 期：part_PB
- 页码：828-837
- 全文大小：1477 K
文摘
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Growth of Lu3−xGdxAl5−yGayO12:Ce film with x=1.25–1.5 and y=0–4.0 onto YAG substrates.
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Lattice constant of films and film-substrate misfit non-monotonically depends on Ga content.
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Optical properties of films depend on Ga content in the octahedral and tetrahedral sites of garnet host.
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Lu1.5Gd1.5Al3.5-4.0Ga3.5-4.O12:Ce films show very low thermoluminescence above RT range.
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Best LY under α–particles excitation possess Lu1.5Gd1.5Al1.5Ga3.5O12:Ce films.