Suspended Ga₂Se₃ film and epitaxial Bi₂Se₃(221) on GaSb(001) by molecular-beam epitaxy

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• 作者：Bin Li ; Yipu Xia ; Wingkin Ho ; Maohai Xie ; ^mhxie@hku.hk
• 关键词：B2. Bi2Se3 ; B2. Ga2Se3 ; A1. Suspended Ga2Se3 Film ; B1. Topological insulator ; A3. Molecular-Beam Epitaxy
• 刊名：Journal of Crystal Growth
• 出版年：2017
• 出版时间：1 February 2017
• 年：2017
• 卷：459
• 期：Complete
• 页码：76-80
• 全文大小：620 K
• 卷排序：459

文摘

High-index, off c-axis, Bi2Se3 has been grown by molecular beam epitaxy on Ga2Se3. Ga2Se3 layer has been grown by selenation of GaSb(001) surface. The Ga2Se3 film is suspended from the substrate, supported only by nano-pillars.