Effect of nanohole size on selective area growth of InAs nanowire arrays on Si substrates

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• 作者：Xiaoye Wang^a ; ^d ; ^{ywangx06@semi.ac.cn} ; Wenyuan Yang^c ; Baojun Wang^c ; Xianghai Ji^a ; Shengyong Xu^c ; Wei Wang^c ; Qing Chen^c ; Tao Yang^a ; ^b ; ^{tyang@semi.ac.cn}
• 关键词：A1. Nanowires ; A1. Surfaces ; A3. Metalorganic chemical vapor deposition ; A3. Selective-area growth ; B1. Nanomaterials ; B2. InAs
• 刊名：Journal of Crystal Growth
• 出版年：2017
• 出版时间：15 February 2017
• 年：2017
• 卷：460
• 期：Complete
• 页码：1-4
• 全文大小：566 K
• 卷排序：460

文摘

As increasing nanohole size, many NWs per hole become thinner and thinner. Well-defined and position-controlled NW arrays can be achieved. SAG and strain-mediated growth regimes all exist in different size of holes.