Selective area growth of InAs nanostructures on faceted GaAs microstructures by migration enhancedepitaxy

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• 作者：M. Z ; er ; J. Nishinaga ; Y. Horikoshi
• 关键词：A1. Nanostructures ; A3. Migration enhanced epitaxy ; A3. Molecular beam epitaxy ; A3. Selective epitaxy ; B2. Semiconducting indium compounds
• 刊名：Journal of Crystal Growth
• 出版年：2013
• 出版时间：1 September, 2013
• 年：2013
• 卷：378
• 期：Complete
• 页码：480-484
• 全文大小：1936 K

文摘

Selective area growth of InAs nanostructures on faceted GaAs microstructures by migration enhanced epitaxy is studied. By an optimization of the growth conditions and a study of the facet development, well-defined GaAs microstructures with facets mostly belonging to the crystal plane families {01n}, {11n} and (001) are fabricated. Subsequently deposited InAs shows a preferred nucleation on (001) top facets as well as on {012}/{013} and {011} facet boundaries. By the understanding of the InAs nucleation mechanism, precisely positioned In(Ga)As/GaAs nanostructures such as quantum dots and quantum dot chains are achieved. To investigate the interface properties, transmission electron microscopy and energy-dispersive x-ray spectroscopy measurements are performed. The measurements reveal a relatively high incorporation of Ga into the InAs nanostructures even for InAs deposited at a low growth temperature of 470 ¡ãC.