Oxygen precipitation behavior in heavily arsenic doped silicon crystals

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• 作者：Stephan Haringer^a ; Daniela Gambaro^b ; Maria Porrini^a ; ^{mporrini@sunedisonsemi.it}
• 关键词：A2. Czochralski method ; B2. Semiconducting silicon ; A1. Characterization ; A1. Volume defects
• 刊名：Journal of Crystal Growth
• 出版年：2017
• 出版时间：1 January 2017
• 年：2017
• 卷：457
• 期：Complete
• 页码：325-330
• 全文大小：1662 K
• 卷排序：457

文摘

Oxygen precipitation in heavily arsenic doped silicon increases with the oxygen concentration. A precipitation retardation effect is observed for dopant concentration above 1.7×1019 cm−3. Precipitation is enhanced by a permanence time in the temperature range 450–750 °C.