The FEM analysis of FGM piezoelectric semiconductor problems

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• 作者：J. Sladek^a ; ^{jan.sladek@savba.sk} ; V. Sladek^a ; H.H.-H. Lu^b ; D.L. Young^b
• 关键词：Finite element method ; Functionally graded materials ; Piezoelectric semiconductors
• 刊名：Composite Structures
• 出版年：2017
• 出版时间：1 March 2017
• 年：2017
• 卷：163
• 期：Complete
• 页码：13-20
• 全文大小：687 K
• 卷排序：163

文摘

The finite element method is developed for 3-D general boundary value problems for a piezoelectric semiconductor with functionally graded material properties. The electron density and electric current are additionally considered in the constitutive equations for piezoelectric semiconductors. A general variation of material properties with Cartesian coordinates is treated in the numerical analyses. The influence of material parameter gradation and initial electron density is investigated in the static case. Numerical results are presented for a 3-D beam under a static and impact mechanical load. Transversely isotropic material properties are considered in this study.