Singularity analysis of planar cracks in three-dimensional piezoelectric semiconductors via extended displacement discontinuity boundary integral equation method

详细信息    查看全文

• 作者：MingHao Zhao^a ; ^b ; Yuan Li^a ; Yang Yan^b ; CuiYing Fan^b ; ^{fancy@zzu.edu.cn" class="auth_mail" title="E-mail the corresponding author}
• 关键词：Piezoelectric semiconductor ; Penny-shaped crack ; Extended displacement discontinuity method ; Boundary integral equation ; Piezoelectric-conductor iterative method (PCIM) ; Intensity factor
• 刊名：Engineering Analysis with Boundary Elements
• 出版年：2016
• 出版时间：June 2016
• 年：2016
• 卷：67
• 期：Complete
• 页码：115-125
• 全文大小：1206 K

文摘

The displacement discontinuity boundary integral equation method is extended to analyze the singularity of near-border fields of the planar crack of arbitrary shape in the isotropic plane of a three-dimensional transversely isotropic piezoelectric semiconductor. The hyper-singular boundary integral equations are derived in terms of the displacement, electric potential and carrier density discontinuities across the crack faces, in which body integrals for the carrier density are introduced. Based on the finite-part integrals, singularity exponents and asymptotic expressions of the crack border fields are obtained. The stress, electric displacement and electric current intensity factors are given in terms of the displacement, electric potential and carrier density discontinuities. Finite element results for penny-shaped and line cracks based on the piezoelectric-conductor iterative method are used to verify the derivations of the intensity factors.