Analysis of electron transport in AlGaN/GaN superlattice HEMTs for isotopes ¹⁴N and ¹⁵N

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• 作者：Kaushik Mazumdar^a ; ^{kaushik_edu@yahoo.co.in} ; Rajeev Kumar Ranjan^a ; ^{rkranjan2k@gmail.com} ; Ravi Shankar^a ; ^{ravi148shankar@gmail.com} ; ^{ravi148@gmail.com} ; Ahna Sharan^a ; Bindu Priyadarshini^a ; ^{bindup2k4@gmail.com} ; Mainak Kundu^a ; ^{mainak.kr.kundu@gmail.com} ; Aniruddha Ghosal^b ; ^{aghosal2008@gmail.com}
• 关键词：Hot electrons ; Isotopes ; Scattering rate
• 刊名：Superlattices and Microstructures
• 出版年：2016
• 出版时间：December 2016
• 年：2016
• 卷：100
• 期：Complete
• 页码：983-987
• 全文大小：578 K
• 卷排序：100

文摘

The study of the effect for ratio related to isotopes 14N and 15N has been studied. Different properties of AlGaN/GaN HEMT has been mentioned. The variation of scattering rate with 2DEG density for Ga14Nx 15N1-x is plotted with different nitrogen isotopes ratio. The scattering rate increases with electric field for pure Ga14Nx 15N1-x.