Raman characterization of hydrogen ion implanted silicon: “High-dose effect”?

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• 作者：Sergey V. Ovsyannikov ; Vsevolod V. Shchennikov Jr ; Vladimir V. Shchennikov ; Yuri S. Ponosov ; Irina V. Antonova ; Sergey V. Smirnov
• 关键词：Silicon ; Amorphous ; Nanostructure ; Hydrogen ion implantation ; Raman spectra ; High-dose effect
• 刊名：Physica B
• 出版年：2008
• 出版时间：1 October 2008
• 年：2008
• 卷：403
• 期：19-20
• 页码：3424-3428
• 全文大小：642 K

文摘

The Raman spectra of nanostructures formed on silicon Si single-crystalline wafers by implantation with hydrogen ions of fluencies ranging within D2×10¹⁶–3×10¹⁷ cm⁻² are reported. The presence of both crystalline and amorphous silicon phases were found in the spectra. A non-monotonic growth in the intensities of the peaks originating from the crystalline and the amorphous phases with a dose of the implantation was registered. A ratio of the intensities of the main peaks of the amorphous to the crystalline Si phases also demonstrated a non-monotonic behaviour (“high-dose effect”). Possible reasons and mechanisms of the non-monotonic dependence of a “degree” of amorphization on a dose of the implantation (or irradiation) are discussed.