Transfer printing of fully formed thin-film microscale GalnP/GaAs solar cell on silicon with interfacial material of HfO₂

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• 作者：Ling Shen^a ; ^{shenling1314@cumt.edu.cn} ; Yifeng Shen^a ; Feng Li^b
• 关键词：Mechanical stacking ; Interface reflection ; HfO2 ; GalnP/GaAs ; Si ; Solar cell
• 刊名：Superlattices and Microstructures
• 出版年：2016
• 出版时间：December 2016
• 年：2016
• 卷：100
• 期：Complete
• 页码：1198-1204
• 全文大小：1387 K
• 卷排序：100

文摘

Micro-scale double-junction GalnP/GaAs solar cell has been transfer printed onto Si substrate for the first time to mimic mechanically- stacked device. The 20nm-thick HfO2 film has been used as optically-transparent and electrically-insulating interface material. NIR optical image, cross sectional view SEM image and spatially-resolved reflectance confirm the bonding of high uniformity and quality.