Enhanced endurance reliability and low current operation for AlO_x/HfO_x based unipolar RRAM with Ni electrode

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• 作者：Yu-Sheng Chen^a ; Pang-Shiu Chen^b ; ^{pschen@must.edu.tw" class="auth_mail} ; Heng-Yuan Lee^a ; Tai-Yuan Wu^a ; Kan-Hsueh Tsai^a ; Frederick Chen^a ; Ming-Jinn Tsai^a
• 关键词：Resistive memory ; HfO2 ; Ni ; Unipolar
• 刊名：Solid-State Electronics
• 出版年：April, 2014
• 年：2014
• 卷：94
• 期：Complete
• 页码：1-5
• 全文大小：1150 K

文摘

A 1-nm-thick AlO_x layer is adopted to successfully eliminate soft-errors and reduce the operation current in HfO_x based unipolar resistive random access memory (RRAM) with Ni as top electrode. Ni/HfO_x/TiN RRAMs with one transistor-one resistor configuration during repetitive programming/erasing suffer serious soft-errors. The AlO_x layer can share the applied voltage and suppress the soft-errors in the AlO_x/HfO_x based RRAM in high resistance state. The AlO_x layer also modifies the conductive filaments in the devices with the low resistance to avoid the unexpected resistive switching. The forming/SET voltage, the high resistance state, and the on/off ratio in the Ni/AlO_x RRAMs are larger than those of Ni ones. In particular, the soft-errors in the devices with ramped voltage verification are eliminated. The intermediate AlO_x film is also beneficial for the reduced operation current of the device, which is as low as 10 渭A with a pulse width of 40 ns.