Simulation studies of the n⁺n^{?/sup> Si sensors having p-spray/p-stop implant for the SiD experiment}

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• 作者：Pooja Saxena ; Kirti Ranjan ; Ashutosh Bhardwaj  ; ;   ; ^{abhardwaj@physics.du.ac.in} ; R.K. Shivpuri ; Satyaki Bhattacharya
• 关键词：Silicon sensor ; High energy ; Isolation ; SiD ; p-spray ; p-stop
• 刊名：Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
• 出版年：2011
• 出版时间：1 December 2011
• 年：2011
• 卷：658
• 期：1
• 页码：66-69
• 全文大小：972 K

文摘

Silicon Detector (SiD) is one of the proposed detectors for the future International Linear Collider (ILC). In the innermost vertex of the ILC, Si micro-strip sensors will be exposed to the neutron background of around 1?.6¡Á10¹⁰ 1 MeV equivalent neutrons cm^? year^?. The p⁺n^{?/sup>n+ double-sided Si strip sensors are supposed to be used as position sensitive sensors for SiD. The shortening due to electron accumulation on the n+n?/sup> side of these sensors leads to uniform spreading of signal over all the n+ strips and thus ensuring good isolation between the n+ strips becomes one of the major issues in these sensors. One of the possible solutions is the use of floating p-type implants introduced between the n+ strips (p-stops) and another alternative is the use of uniform layer of p-type implant on the entire n-side (p-spray). However, pre-breakdown micro-discharge is reported because of the high electric field at the edge of the p-stop/p-spray. An optimization of the implant dose profile of the p-stop and p-spray is required to achieve good electrical isolation while ensuring satisfactory breakdown performance of the Si sensors. Preliminary results of the simulation study performed on the n+n?/sup> Si sensors having p-stop and p-spray using device simulation program, ATLAS, are presented.}