X-ray excited luminescence of Ga- and In-doped ZnO microrods by annealing treatment
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- 作者：Qianli Li ; Xiaolin Liu ; liuxiaolin@tongji.edu.cn" class="auth_mail" title="E-mail the corresponding author ; Mu Gu ; Shiming Huang ; Juannan Zhang ; Chen Ni ; Bo Liu ; Yahua Hu ; Qiang Wu ; Shuning Zhao
- 关键词：Ga- and In-doped ZnO microrods ; Hydrothermal process ; Annealing treatment ; X-ray excited luminescence
- 刊名：Superlattices and Microstructures
- 出版年：2016
- 出版时间：October 2016
- 年：2016
- 卷：98
- 期：Complete
- 页码：351-358
- 全文大小：2208 K
文摘
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A slightly etching appeared on the surface of Ga- and In-doped ZnO nanorods after annealing at 1000 °C.
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The doped ZnO nanorods exhibited a strong visible emission band with a blue-shift under X-ray excitation.
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An intense superfast ultraviolet emissions were observed after further hydrogen annealing.