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Magnetron sputtering deposition Ti–B–C–N films by Ti/B4C compound target
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文摘
Ti–B–C–N films were deposited by unbalanced DC magnetron sputtering with Ti/B4C compound target. The sputtering zone in the surface of the target was adjusted by a magnetic coil. X-ray photoelectron spectrum, X-ray diffraction, nano-indentation and scratch tests were used to analyze the film composition, phase structure, hardness, modulus and scratch resistance. The results showed that the composition of the Ti–B–C–N films can be adjusted by changing deposition parameters, such as gas ratio of N2 to Ar and the magnetron coil current. The main crystal phase in the films was TiB2. The proportion of crystalline TiB2 decreased with the increasing of N2 partial pressure and reached a maximum value at 300 mA magnetic coil current, when the coil current changed from 200 mA to 500 mA. The films containing more TiB2 proportion showed higher hardness and modulus. The scratch resistance of the films increased with the films hardness.

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