Role of surface reconstruction on Stranski-Krastanov growth illustrated using a modified solid-on-solid model

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• 作者：Paramita Ghosh ; Madhav Ranganathan ; ^{madhavr@iitk.ac.in}
• 关键词：A1. Computer Simulation ; A1. Roughening ; A1. Stresses ; A1. Surface Processes ; A3. Molecular beam epitaxy ; B1. Germanium silicon alloys
• 刊名：Journal of Crystal Growth
• 出版年：2017
• 出版时间：1 January 2017
• 年：2017
• 卷：457
• 期：Complete
• 页码：98-103
• 全文大小：2154 K
• 卷排序：457

文摘

We have implemented lattice-based kMC simulations of Ge/Si(001) heteroepitaxy. Surface reconstructions and mismatch strain energy are explicitly considered. Stranski–Krastanov growth with wetting layer and 3D island formation is reproduced. We observe shape transition from rectangular to square with increasing coverage. Island size evolution from bimodal to unimodal distribution is reproduced.