Self-consistent charge-up simulation for the microscopic feature of SiO2 layer in rf capacitive discharge
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- 作者：S.H. Leea ; J.K. Leeb ; S.W. Jungc ; D.W. Kimd ; S.J. Youe ; sjyou@cnu.ac.kr" class="auth_mail" title="E-mail the corresponding author
- 关键词：PIC-MCC simulation ; Charge-up simulation ; EEDF ; IEDF ; Plasma and sheath potential
- 刊名：Current Applied Physics
- 出版年：2015
- 出版时间：November 2015
- 年：2015
- 卷：15
- 期：11
- 页码：1463-1471
- 全文大小：5548 K
文摘
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Charging of microtrenches in a SiO2 layer for RF plasma is studied by Particle-in-Cell Monte Carlo Collision(PIC-MCC) model.
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A 1D PIC-MCC coupled to a 3D PIC model of the microtrench is used to determine the kinetics of particles.
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Increasing the gas pressure and decreasing the discharge voltage both result in a decrease of the microtrench charge-up.
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For the gas pressure increase, the ion charge decreases but the electron charge increases resulting the decrease of net charge.
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For the discharge voltage decrease, the ion charge decreases but the electron charge changed hardly resulting the same result.