Performance of RF sputtered p-Si/n-ZnO nanoparticle thin film heterojunction diodes in high temperature environment

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• 作者：Satyendra Kumar Singh^a ; ^b ; ^{satyndra.singh.eee09@itbhu.ac.in} ; Purnima Hazra^c ; ^{purnima.hazra@smvdu.ac.in}
• 关键词：Si/ZnO heterojunction diode ; Surface morphology ; Current-voltage characteristics ; Interface ; Richardson constant ; Temperature stability
• 刊名：Applied Surface Science
• 出版年：2017
• 出版时间：1 April 2017
• 年：2017
• 卷：400
• 期：Complete
• 页码：206-211
• 全文大小：1341 K
• 卷排序：400

文摘

Synthesize ZnO nanoparticle thin film on p-Si substrate using RF sputtering method. I–V and C–V characteristics of Si/ZnO heterojunction diode are studied. High temperature performance is analyzed accounting barrier height inhomogeneities. Gaussian distribution of BH inhomogeneities is considered to modify Richardson plot. Modified R constant is 33.06 Acm−2K−2, i.e. nearer to theoretical value 32 Acm−2K−2.