Photoluminescence of erbium in SiO_xN_y alloys annealed at high temperature

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• 作者：E. Steveler ; H. Rinnert ; M. Vergnat
• 关键词：Rare earth alloys and compounds ; Semiconductors ; Thin films ; Vapor deposition ; Luminescence ; Optical spectroscopy
• 刊名：Journal of Alloys and Compounds
• 出版年：25 April, 2014
• 年：2014
• 卷：593
• 期：Complete
• 页码：56-60
• 全文大小：586 K

文摘

Amorphous silicon oxynitride SiO_xN_y ternary alloys were prepared by reactive evaporation, with stoichiometries varying between Si_0.47O_0.05N_0.48 and Si_0.35O_0.65. These thin films were doped with erbium during the evaporation process with an effusion cell. The composition and the atomic structure were determined by X-ray photoelectron spectroscopy (XPS), infrared (IR) absorption spectrometry, and Raman spectrometry. Photoluminescence (PL) experiments were carried out in the visible and infrared ranges. The Er signal was maximum for equal amounts of oxygen and nitrogen in the SiO_xN_y alloys. It disappears for oxygen contents greater than 30%. Photoluminescence excitation (PLE) experiments show that the PL is due to an indirect excitation process from the pure silicon domains.