Dielectric properties under high electric field for silicon doped alumina thin film with glass-like structure derived from sol-gel process
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- 作者：Manwen Yao ; 1 ; yaomw@tongji.edu.cn" class="auth_mail" title="E-mail the corresponding author ; Zhen Su1 ; Pei Zou ; Jianwen Chen ; Fei Li ; Qian Feng ; Xi Yao
- 关键词：Alumina thin films ; Si doping ; Glass-like structure ; Breakdown strength ; Leakage current ; Dielectric constant and loss
- 刊名：Journal of Alloys and Compounds
- 出版年：2017
- 出版时间：5 January 2017
- 年：2017
- 卷：690
- 期：Complete
- 页码：249-255
- 全文大小：2000 K
文摘
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Dielectric Si-doped alumina thin films were prepared by sol-gel method.
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Al
OSi bonds and cation vacancies are produced by substitutive behavior.- •
Excellent dielectric properties of Si-doping alumina thin films were achieved.
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The leakage current reduces two orders of magnitude when Si concentration is 2mol%.
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Breakdown strength increased by 93%, comparing with undoped alumina film.