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Effect of scandium content on structure and piezoelectric properties of AlScN films deposited by reactive pulse magnetron sputtering
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文摘
AlxSc1-xN films with high piezoelectric coefficient are deposited by pulse magnetron sputtering without substrate heating For 35 to 43% scandium content a relative broad range of piezoelectric coefficients could be detected Reduced elastic stiffness and higher polarity of the distorted wurtzite structure A substrate temperature below 300 °C seems to beneficial for good piezoelectric properties

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