Onset of plastic relaxation in semipolar () In_xGa_{1鈭?span style='font-style: italic'>x}N/GaN heterostructures

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• 作者：Ingrid L. Koslow ; Matthew T. Hardy ; Po Shan Hsu ; Feng Wu ; Alexey E. Romanov ; Erin C. Young ; Shuji Nakamura ; Steven P. DenBaars ; James S. Speck
• 关键词：A1. Interfaces ; A1. Line defects ; A1. Stresses ; A3. Metalorganic vapor phase epitaxy ; B1. Nitrides
• 刊名：Journal of Crystal Growth
• 出版年：15 February, 2014
• 年：2014
• 卷：388
• 期：Complete
• 页码：48-53
• 全文大小：2137 K

文摘

The onset of plastic relaxation via misfit dislocation (MD) formation in In_xGa_1鈭?em>xN layers grown by metal-organic chemical vapor deposition on the () semipolar plane of GaN substrates is investigated using high-resolution X-ray diffraction, transmission electron microscopy and cathodoluminescence. The results of critical thickness calculations for MD formation as a function of In_xGa_1鈭?em>xN alloy composition x are compared with experimental observations. MD generation is observed initially as a result of slip on the (0001) slip plane, and subsequently as a result of additional slip on inclined m-planes, which eventually leads to an increase in threading dislocation density.