We have shown for a given surface termination (–H, –NH2 or –OH) the band gap decreases for larger diameter nanowires. The DOS shows the presence of N 2p and O 2p states above the original VB edge is the origin of the band gap reduction of GeNWs. The nanowire diameter and surface termination shifts the absorption edge of GeNWs to longer wavelengths. The combination of nanowire diameter and surface chemistry can be effectively utilised to tune the band gaps.