Enhancing photovoltaic performance of PbS/rGO nanocomposites: The role of buffer layer of ZnS/rGO nanocomposites

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• 作者：H.R. Azimi^a ; Mahmood Ghoranneviss^a ; S.M. Elahi^a ; Ramin Yousefi^b ; ^{Yousefi.ramin@gmail.com" class="auth_mail" title="E-mail the corresponding author} ; ^{raminyousefi@iaumis.ac.ir" class="auth_mail" title="E-mail the corresponding author}
• 关键词：B. Composites ; A. Powders ; chemical preparation ; Photovoltaic performance ; Solar energy materials ; ZnS/rGO buffer layer ; PbS/rGO nanocomposites
• 刊名：Ceramics International
• 出版年：2017
• 出版时间：January 2017
• 年：2017
• 卷：43
• 期：1
• 页码：128-132
• 全文大小：1195 K

文摘

In the present study, we attempt to report an improvement in the photovoltaic performance of PbS/graphene nanocomposites, which were employed as the photovoltaic materials, using the layers of ZnS nanoparticles (NPs) and ZnS/graphene nanocomposites as n-type buffer layers. Graphene oxide (GO) sheets were used as graphene source and the ZnS/GO and PbS/GO nanocomposites were synthesized by a simple and cost-effective co-precipitation method using l-cysteine amino acid and Dodecylbenzenesulfonic acid (DBSA) as the surfactants, respectively. Characterization results such as X-ray diffractometer (XRD) patterns and X-ray photoelectron spectroscopy (XPS) results indicated that, the GO sheets were changed into reduced graphene oxide (rGO) during synthesis process. The photovoltaic measurements indicated that rGO in ZnS/rGO buffer layer had a more significant role in enhancing the photovoltaic performance of the photovoltaic device compared to ZnS (NPs) buffer layer. Moreover, these measurements demonstrated that the ZnS/rGO caused an increase in the short-circuit current (J_SC) of the photovoltaic device, which led to improving the photovoltaic performance of the device.