Experimental determination of dependence of vertical growth rate on surface supersaturation in GaAs(001) microchannel epitaxy and growth optimization
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- 作者：Masafumi Tomita ; Yosuke Mizuno ; Hiroyuki Takakura ; Daisuke Kambayashi ; Shigeya Naritsuka 133434022@ccalumni.meijo-u.ac.jp" class="auth_mail" title="E-mail the corresponding author ; Takahiro Maruyama
- 关键词：A1. BCF theory ; A1. Nucleation ; A1. Surface supersaturation ; A3. Liquid phase epitaxy ; A3. Microchannel epitaxy ; B2. Semiconducting gallium arsenide
- 刊名：Journal of Crystal Growth
- 出版年：2016
- 出版时间：15 April 2016
- 年：2016
- 卷：440
- 期：Complete
- 页码：13-16
- 全文大小：1251 K
文摘
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The dependence of vertical growth rate on surface supersaturation in GaAs(001) microchannel epitaxy (MCE) is studied.
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The surface supersaturation is estimated by the fitting of a spiral step on the grown layer.
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The screw-like steps at stacking faults (SFs) are also employed to estimate the surface supersaturation.
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2D nucleation at SFs was found to act as a strong step source.
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An MCE layer with a large aspect ratio can be reproducibly obtained using appropriately controlled surface supersaturation.