High-energy ion implantation of iron in silicon

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• 作者：Bhole ; K.G. ; Kamalapurkar ; B.A. ; Dubey ; S.K. ; Yadav ; A.D. ; Gundu Rao ; T.K. ; Mohanti ; Tanuja ; et. al.
• 关键词：61.72.&minus ; H ; 61.72.Dd ; 61.72.Hh ; 61.80.&minus ; x ; 79.20.Rf ; High-energy implantation ; Iron ; Silicon ; FTIR ; Low temperature ESR
• 刊名：Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
• 出版年：2003
• 出版时间：December, 2003
• 年：2003
• 卷：212
• 期：Complete
• 页码：525-529
• 全文大小：333 K

文摘

Seventy MeV, ⁵⁶Fe⁵⁺ ion implantation into p-type silicon with different doses varying from 1×10¹² to 5×10¹⁴ ionscm⁻² has been investigated by Fourier transform infrared (FT/IR) reflectivity and low temperature (298–133 K) ESR measurements. The FT/IR reflectivity studies showed the presence of interference fringes in high dose (>1×10¹³ ionscm⁻²) implanted samples indicating the formation of ion induced damaged layers. The depth of the damaged layer from the silicon surface estimated from fringe shifts was found to be about 16 μm comparable to the project range of ⁵⁶Fe ions in silicon at 70 MeV. The ESR studies show the presence of Pa and Pb centers with g values 2.0063 and 2.0015, respectively, at room temperature. In addition to these, other defects observed at g values 2.0071 and 1.9947 are due to complex defects produced by high-energy ion implantation.