Characterization and device applications of p-type ZnO films prepared by thermal oxidation of sputter-deposited zinc oxynitride

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• 作者：A.E. Rakhshani ; ^{ali.rakhshani@ku.edu.kw} ; ^{alirakhshani@yahoo.com}
• 关键词：p-type ZnO ; Sputtering ; Thermal oxidation ; Homojunction diode ; Schottky diode ; Electroluminescence ; Photoluminescence
• 刊名：Journal of Alloys and Compounds
• 出版年：2017
• 出版时间：25 February 2017
• 年：2017
• 卷：695
• 期：Complete
• 页码：124-132
• 全文大小：1309 K
• 卷排序：695

文摘

p-ZnO films are prepared by thermal oxidation of sputter-deposited zinc oxynitride. Mechanism of nitrogen doping is described based on experimental evidences. An acceptor level 70–90 meV above the valence band edge is detected in p-ZnO films. A deep level located 1.72 eV above the valence band edge is present in p-ZnO films. Schottky and homojunction diodes with excellent device parameters are prepared.