Advantages of Zn_1.25Sb₂Te₃ material for phase change memory

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• 作者：Guoxiang Wang ; Qiuhua Nie ; Xiang Shen ; Rongping Wang ; Liangcai Wu ; Yegang Lv ; Jing Fu ; Tiefeng Xu ; Shixun Dai
• 关键词：Thin films ; Phase transformation ; Thermal properties ; Electrical properties
• 刊名：Materials Letters
• 出版年：2012
• 出版时间：15 November, 2012
• 年：2012
• 卷：87
• 期：Complete
• 页码：135-138
• 全文大小：434 K

文摘

The thermal and electrical properties of Zn_1.25Sb₂Te₃ film have been investigated for phase change memory (PCM) applications. Compared with the conventional Ge₂Sb₂Te₅, Zn_1.25Sb₂Te₃ film exhibits a higher crystallization temperature (¡«200 ¡ãC), greater activation energy (2.71 eV), and better data retention of 10 years at 105 ¡ãC. In addition, higher crystalline resistance and better resistance contrast are helpful to reduce RESET current and achieve a higher On/OFF ratio of PCM, respectively. Raman spectra of crystalline thin films suggests that the local bonding arrangement around Sb atoms changes; Sb₂Te₃ component is thus mainly responsible for the phase transition in Zn_1.25Sb₂Te₃ alloys.