Determination of the optimum annealing temperature and time for Indium-doped SnO₂ films to achieve the best p-type conductive property

详细信息    查看全文

• 作者：Tran Le^a ; ^{ltran@hcmus.edu.vn} ; Huu Phuc Dang^b ; ^c ; ^{danghuuphuc@tdt.edu.vn} ; Van Hieu Le^d
• 关键词：p-type transparent conducting oxide ; In-doped SnO2 film ; DC magnetron sputtering ; X-ray diffraction ; Photoluminescence ; X-ray photoelectron spectroscopy
• 刊名：Journal of Alloys and Compounds
• 出版年：2017
• 出版时间：5 March 2017
• 年：2017
• 卷：696
• 期：Complete
• 页码：1314-1322
• 全文大小：2595 K
• 卷排序：696

文摘

The incorporation of In in SnO2 lattice formed preferred SnO2 (101) and (211) planes. Film annealed at 550 °C for 2 h achieved the lowest resistivity of 0.68 Ω cm. The p-type conductivity of film achieved at the deposition temperature of 300 °C. An average transmittance was about 85% in the visible light. The XPS and PL spectra identified the existence of acceptor In3+in the films.