Influences of post-annealing temperature on the structural and electrical properties of mixed oxides (CuFeO₂ and CuFe₂O₄) thin films prepared by spray pyrolysis technique

详细信息    查看全文

• 作者：S.M. Thahab^a ; ^{Sabah.alabboodi@uokufa.edu.iq" class="auth_mail" title="E-mail the corresponding author} ; Adel H. Omran Alkhayatt^b ; ^{Adilh.alkhayat@uokufa.edu.iq" class="auth_mail" title="E-mail the corresponding author} ; Inass Abdulah Zgair^b ; ^{Inass.zagir@yahoo.com" class="auth_mail" title="E-mail the corresponding author}
• 关键词：Thin Film ; Spray pyrolysis deposition ; Delafossite CuFeO2
• 刊名：Materials Science in Semiconductor Processing
• 出版年：2016
• 出版时间：January 2016
• 年：2016
• 卷：41
• 期：Complete
• 页码：436-440
• 全文大小：1993 K

文摘

P-type mixed oxides (CuFeO₂ and CuFe₂O₄) transparent conducting thin films have been successfully deposited on p-type Si (111) substrates at 450 °C by spray pyrolysis deposition (SPD) and annealed at 800 °C for 2 h. The crystal structure, surface morphology and electrical property have been investigated. It is observed that the CuFeO₂ and CuFe₂O₄ thin films as deposited and annealed, have polycrystalline hexagonal structure and the crystallite size increases by annealing processes. The electrical property of the Ni/CuFeO₂/Si Metal–Semiconductor–Metal (MSM) photo detectors was investigated using the current–voltage (I–V) measurements. The barrier heights ϕ_Β of Ni/CuFeO₂/Ni MSM thin films of as deposited and annealed on Si substrates were calculated and its values are 0.478, 0.345 eV, respectively with an applied bias voltage of 3 V.