Structural, optical, and electrical properties of conducting p-type transparent Cu-Cr-O thin films

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• 作者：Chung.-Hsing. Sun^a ; Du.-Cheng. Tsai^a ; Zue.-Chin. Chang^b ; Erh.-Chiang. Chen^a ; Fuh.-Sheng. Shieu^a ; ^{fsshieu@dragon.nchu.edu.tw" class="auth_mail" title="E-mail the corresponding author}
• 关键词：Delafossite ; Optoelectronic properties ; Transparent conducting oxide ; Copper chromium oxide
• 刊名：Ceramics International
• 出版年：2016
• 出版时间：September 2016
• 年：2016
• 卷：42
• 期：12
• 页码：13697-13703
• 全文大小：2729 K

文摘

Cu–Cr–O films were prepared by DC magnetron co-sputtering using Cu and Cr targets on quartz substrates. The films were then annealed at temperatures ranging from 400 °C to 900 °C for 2 h under a controlled Ar atmosphere. The as-deposited and 400 °C-annealed films were amorphous, semi-transparent, and insulated. After annealing at 500 °C, the Cu–Cr–O films contained a mixture of monoclinic CuO and spinel CuCr₂O₄ phases. Annealing at 600 °C led to the formation of delafossite CuCrO₂ phases. When the annealing was further increased to temperatures above 700 °C, the films exhibited a pure delafossite CuCrO₂ phase. The crystallinity and grain size also increased with the annealing temperature. The formation of the delafossite CuCrO₂ phase during post-annealing processing was in good agreement with thermodynamics. The optimum conductivity and transparency were achieved for the film annealed at approximately 700 °C with a figure of merit of 1.51×10⁻⁸ Ω⁻¹ (i.e., electrical resistivity of up to 5.13 Ω-cm and visible light transmittance of up to 58.3%). The lower formation temperature and superior properties of CuCrO₂ found in this study indicated the higher potential of this material for practical applications compared to CuAlO₂.