The novel dopant for hole-transporting material opens a new processing route to efficiently reduce hysteresis and improve stability of planar perovskite solar cells
F4-TCNQ has been used as dopant for Spiro-OMeTAD and passivator for perovskite. PSC based on F4-TCNQ doped Spiro-OMeTAD has shorter time of preparation. PSC based on F4-TCNQ doped Spiro-OMeTAD shows low hysteresis, superior stability. PSC based on F4-TCNQ doped Spiro-OMeTAD obtains high PCE of 13%.