Formation of the distributed NiSiGe nanocrystals nonvolatile memory formed by rapidly annealing in N₂ and O₂ ambient

详细信息    查看全文

• 作者：Chih-Wei Hu ; Ting-Chang Chang ; Chun-Hao Tu ; Cheng-Neng Chiang ; Chao-Cheng Lin ; Min-Chen Chen ; Chun-Yen Chang ; Simon M. Sze ; Tseung-Yuen Tseng
• 关键词：Co-sputtering ; Thin film ; Nanocrystals ; Nonvolatile memory
• 刊名：Thin Solid Films
• 出版年：2010
• 出版时间：1 October 2010
• 年：2010
• 卷：518
• 期：24
• 页码：7304-7307
• 全文大小：757 K

文摘

In this work, electrical characteristics of the Ge-incorporated Nickel silicide (NiSiGe) nanocrystals memory device formed by the rapidly thermal annealing in N₂ and O₂ ambient have been studied. The trapping layer was deposited by co-sputtering the NiSi₂ and Ge, simultaneously. Transmission electron microscope results indicate that the NiSiGe nanocrystals were formed obviously in both the samples. The memory devices show obvious charge-storage ability under capacitance–voltage measurement. However, it is found that the NiSiGe nanocrystals device formed by annealing in N₂ ambient has smaller memory window and better retention characteristics than in O₂ ambient. Then, related material analyses were used to confirm that the oxidized Ge elements affect the charge-storage sites and the electrical performance of the NCs memory.