Spin polarization of carriers in resonant tunneling devices containing InAs self-assembled quantum dots
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- 作者：J. Araú ; jo e Nobregaa ; V. Orsi Gordoa ; H.V.A. Galetib ; Y. Galvã ; o Gobatoa ; yara.ufscar@gmail.com" class="auth_mail" title="E-mail the corresponding author ; M.J.S.P. Brasilc ; D. Taylord ; M. Orlitae ; M. Heninid
- 关键词：Resonant tunneling diodes ; Photoluminescence ; Magneto-photoluminescence ; Spintronics ; Spin polarization ; Quantum dots
- 刊名：Superlattices and Microstructures
- 出版年：2015
- 出版时间：December 2015
- 年：2015
- 卷：88
- 期：Complete
- 页码：574-581
- 全文大小：976 K
文摘
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The charge state and spin polarization of InAs quantum dots in resonant tunneling diodes can be voltage controlled.
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The voltage control of spin polarization degree was associated to the formation of different excitonic complexes in the QDs.
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The spin polarization degree presents a maximum value (∼−37% at 15T) around the hole resonant tunneling condition.