Post ionized defect engineering of the screen-printed Bi₂Te_2.7Se_0.3 thick film for high performance flexible thermoelectric generator

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• 作者：Sun Jin Kim^aAuthor Vitae ; Hyeongdo Choi^aAuthor Vitae ; Yongjun Kim^aAuthor Vitae ; Ju Hyung We^aAuthor Vitae ; Ji Seon Shin^bAuthor Vitae ; Han Eol Lee^cAuthor Vitae ; Min-Wook Oh^dAuthor Vitae ; Keon Jae Lee^cAuthor Vitae ; Byung Jin Cho^a ; ^{bjcho@kaist.edu}Author Vitae
• 关键词：Screen-printed Bi2Te2.7Se0.3 film ; Post ionized defect engineering ; Hydrogen annealing ; Bismuth antisite defect
• 刊名：Nano Energy
• 出版年：2017
• 出版时间：January 2017
• 年：2017
• 卷：31
• 期：Complete
• 页码：258-263
• 全文大小：1026 K
• 卷排序：31

文摘

A post ionized defect engineering process for improving ZT value of the screen-printed BiTeSe thick film is proposed. A post annealing in a forming gas ambient (4% H2 + 96% Ar) can reduce the nano- and micro-bismuth oxide particles in screen-printed BiTeSe films, resulting in a bismuth rich condition and creation of bismuthantisite defects. A maximum ZT of 0.90 with the screen-printed BiTeSe film at room temperature, which isalmost comparable to that of the bulk Bi2Te2.7Se0.3 and is a 2-fold increase over the same screen-printed film without the hydrogen ambient annealing. A f-TEG device with 72 TE pairs (p-type Bi0.5Sb1.5Te3, forming gas annealed n-type Bi2Te2.7Se0.3) generatesa high output power of 6.32 mWcm-2 at ΔT = 25.6 °C.