Direct, sequential growth of copper film on TaN/Ta barrier substrates by alternation of Pb-UPD and Cu-SLRR
详细信息 查看全文
- 作者：J.S. Fanga ; jsfang@nfu.edu.tw" class="auth_mail" title="E-mail the corresponding author ; J.H. Chena ; G.S. Chenb ; Y.L. Chengc ; T.S. Chinb
- 关键词：underpotential deposition ; surface limited redox replacement ; electrochemical atomic layer deposition ; Cu film ; barrier layer
- 刊名：Electrochimica Acta
- 出版年：2016
- 出版时间：10 July 2016
- 年：2016
- 卷：206
- 期：Complete
- 页码：45-51
- 全文大小：1469 K
文摘
- •
Growth of Cu films on TaN/Ta are prepared by Pb-UPD and Cu-SLRR without a seed layer.
- •
Cu coverage is from 0.61 to 0.80 ML for each deposition cycle.
- •
The mechanism of SLRR delay at a higher Pb-UPD is explained by adsorbed perchlorate ions.
- •
Sequential Pb-UPD followed by Cu-SLRR can be applied in Cu interconnections.