Atomic layer deposition of VO₂ films with Tetrakis-dimethyl-amino vanadium (IV) as vanadium precursor

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• 作者：Xinrui Lv^a ; ^b ; Yunzhen Cao^a ; ^{yzhcao@mail.sic.ac.cn} ; Lu Yan^a ; Ying Li^a ; Lixin Song^a
• 关键词：Atomic layer deposition ; Vanadium precursor ; Vanadium dioxide ; Thin films ; Metal-insulator transition
• 刊名：Applied Surface Science
• 出版年：2017
• 出版时间：28 February 2017
• 年：2017
• 卷：396
• 期：Complete
• 页码：214-220
• 全文大小：2660 K
• 卷排序：396

文摘

VO2 film was easily deposited by ALD using novel vanadium precursor V(NMe2)4. Deposition and annealing condition were systematically investigated. Comparable transition properties of VO2 film on resistance and spectral transmittance were studied.