Temperature sensitivity analysis of dopingless charge-plasma transistor

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• 作者：Vishwas Shrivastava ; Anup Kumar ; Chitrakant Sahu ; ^{chitrakant@iiitdmj.ac.in" class="auth_mail" title="E-mail the corresponding author} ; Jawar Singh
• 关键词：Charge-plasma ; Doping-less ; Random dopant fluctuation (RDF) ; Sensitivity ; Simulation ; Variability
• 刊名：Solid State Electronics
• 出版年：2016
• 出版时间：March 2016
• 年：2016
• 卷：117
• 期：Complete
• 页码：94-99
• 全文大小：2177 K

文摘

The junctionless field-effect transistors (JLFETs) have shown potential to scale down in sub-10 nm regime due to simplified fabrication process and less short-channel effects (SCEs), however, sensitivity towards process parameter variation is a major concern. Therefore, in this paper, sensitivity towards temperature variation of recently proposed dopingless (DL) double-gate field-effect transistor (DGFET) and JL-DGFET is reported. Different digital and analog performance metrics were considered and compared for both devices of similar geometries. We observed that the drive current of DL-DGFET decreases with temperature, while, it increases in JL-DGFET because both devices are affected by different scattering mechanisms at higher temperature. The variation in I_ON$I_{\text{ON}}$ and I_OFF$I_{\text{OFF}}$ in DL-DGFET are only 0.095 μ$\mathrm{\mu }$A/K and 0.2 nA/K$\text{nA}/\text{K}$, respectively, while, in JL-DGFET the changes are 0.25 μ$\mathrm{\mu }$A/K and 0.34 nA/K$\text{nA}/\text{K}$, respectively, above room temperature. Below room temperature, it was found that the incomplete ionization effect in JL-DGFET severely affects the drive current, however, DL-DGFET remains unaffected. Hence, the proposed DL-DGFET is less sensitive towards temperature variation and can be employed for cryogenics to high temperature applications.